Specifications:

Transistor Type: NPN Bipolar Junction Transistor (BJT)
Package: TO-126
Collector-Emitter Voltage (VCEO): 30 V
Collector-Base Voltage (VCBO): 40 V
Emitter-Base Voltage (VEBO): 5 V
Maximum Collector Current (IC): 3 A
Maximum Power Dissipation (PD): 12.5 W
DC Current Gain (hFE): 60–400
Transition Frequency (fT): 100 MHz (Typical)
Operating Temperature: -55°C to +150°C

Package Contains:
1Nos C2383 Epitaxial NPN silicon transistor