Specifications:

Transistor Type: NPN Bipolar Junction Transistor (BJT)
Package: TO-92
Collector-Emitter Voltage (VCEO): 40 V
Collector-Base Voltage (VCBO): 60 V
Emitter-Base Voltage (VEBO): 5 V
Maximum Collector Current (IC): 600 mA
Maximum Power Dissipation (PD): 800 mW
DC Current Gain (hFE): 100–300
Transition Frequency (fT): 250 MHz (Typical)
Operating Temperature: -55°C to +150°C

Package Contains:
1Nos C2229 linear power amplifier NPN transistor