Specifications:

Transistor Type: NPN Bipolar Junction Transistor (BJT)
Package Type: TO-92
Collector-Emitter Voltage (Vce): 45V
Collector-Base Voltage (Vcb): 50V
Emitter-Base Voltage (Veb): 6V
Collector Current (Ic): 100mA
Power Dissipation: 500mW
DC Current Gain (hFE): 110 – 800
Transition Frequency: 300 MHz
Operating Temperature: -55°C to +150°C
Applications: Switching, amplification, signal processing, driver circuits

Package Contains:
1Nos BC547 Bipolar NPN transistor