Specifications:

Transistor Type: NPN Bipolar Junction Transistor (BJT)
Process: Epitaxial planar
Package: TO-92 / TO-126 (varies by manufacturer)
Collector-Emitter Voltage (VCEO): 400 V
Collector-Base Voltage (VCBO): 700 V
Emitter-Base Voltage (VEBO): 9 V
Maximum Collector Current (IC): 1.2 A
Maximum Power Dissipation (PD): 1 W
DC Current Gain (hFE): 8–40
Transition Frequency (fT): 4 MHz (Typical)
Operating Temperature: -55°C to +150°C

Package Contains:
1Nos 13001 Epitaxial NPN transistor