Specifications:

Transistor Type: PNP Bipolar Junction Transistor (BJT)
Package: TO-220
Collector-Emitter Voltage (VCEO): 100 V
Collector-Base Voltage (VCBO): 100 V
Emitter-Base Voltage (VEBO): 5 V
Maximum Collector Current (IC): 6 A
Maximum Power Dissipation (PD): 65 W
DC Current Gain (hFE): 15–75
Transition Frequency (fT): 3 MHz (Typical)
Operating Temperature: -65°C to +150°C

Package Contains:
1Nos TIP42C General purpose PNP transistor