Specification
Product Name: A966 Bipolar PNP Transistor
Transistor Type: PNP Bipolar Junction Transistor (BJT)
Package Type: TO-92
Collector-Emitter Voltage (VCEO): -50V
Collector-Base Voltage (VCBO): -60V
Emitter-Base Voltage (VEBO): -5V
Collector Current (IC): -150mA
Power Dissipation: 400mW
DC Current Gain (hFE): 120 to 560
Transition Frequency (fT): Approximately 100MHz
Operating Temperature: -55°C to +150°C
Applications: Audio Amplifiers, Signal Amplification, Switching Circuits, General Electronic Projects, Consumer Electronics
Features: Low Noise, High Current Gain, Reliable Performance, Compact TO-92 Package, Suitable for Low-Power Amplification and Switching

Package Contains:
1Nos A966 Bipolar PNP Transistor