Specifications:

Transistor Type: PNP Bipolar Junction Transistor (BJT)
Package: TO-92
Collector-Emitter Voltage (VCEO): 300 V
Collector-Base Voltage (VCBO): 300 V
Emitter-Base Voltage (VEBO): 5 V
Maximum Collector Current (IC): 500 mA
Maximum Power Dissipation (PD): 400 mW
DC Current Gain (hFE): 40–160
Transition Frequency (fT): 50 MHz (Typical)
Operating Temperature: -55°C to +150°C

Package Contains:
1Nos A92 High voltage PNP transistor