Specifications:

Transistor Type: NPN Bipolar Junction Transistor (BJT)
Package: TO-92
Collector-Emitter Voltage (VCEO): 160 V
Collector-Base Voltage (VCBO): 180 V
Emitter-Base Voltage (VEBO): 6 V
Maximum Collector Current (IC): 600 mA
Maximum Power Dissipation (PD): 625 mW
DC Current Gain (hFE): 80–300
Transition Frequency (fT): 100 MHz (Typical)
Operating Temperature: -55°C to +150°C

Package Contains:
1Nos 2N5551 Amplifier NPN transistor