Specifications:

Transistor Type: PNP Bipolar Junction Transistor (BJT)
Package: TO-92
Collector-Emitter Voltage (VCEO): 150 V
Collector-Base Voltage (VCBO): 160 V
Emitter-Base Voltage (VEBO): 5 V
Maximum Collector Current (IC): 600 mA
Maximum Power Dissipation (PD): 625 mW
DC Current Gain (hFE): 30–240
Transition Frequency (fT): 100 MHz (Typical)
Operating Temperature: -55°C to +150°C

Package Contains:
1Nos 2N5401 Power switch PNP transistor