Specifications:

Transistor Type: NPN Bipolar Junction Transistor (BJT)
Package: TO-126 / TO-92 (varies by manufacturer)
Collector-Emitter Voltage (VCEO): 400 V
Collector-Base Voltage (VCBO): 700 V
Emitter-Base Voltage (VEBO): 9 V
Maximum Collector Current (IC): 1.5 A
Maximum Power Dissipation (PD): 1.5 W
DC Current Gain (hFE): 8–40
Transition Frequency (fT): 4 MHz (Typical)
Operating Temperature: -55°C to +150°C

Package Contains:
1Nos 13003 High voltage NPN transistor